Samsung M378A1K43EB2-CWE 8GB vs Corsair CMK16GX4M4A2666C16 4GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Corsair CMK16GX4M4A2666C16 4GB

Corsair CMK16GX4M4A2666C16 4GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 13% 更低的延时
更快的读取速度，GB/s

17.6 14.7

测试中的平均数值
更快的写入速度，GB/s

12.0 11.8

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMK16GX4M4A2666C16 4GB

需要考虑的原因
Corsair CMK16GX4M4A2666C16 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Corsair CMK16GX4M4A2666C16 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 38
读取速度，GB/s

17.6 14.7
写入速度，GB/s

12.0 11.8
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2882

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173QH0-YK0 4GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Kingston 9905403-447.A00LF 4GB

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A-DATA Technology DDR4 2400 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Corsair CMK16GX4M2K4333C19 8GB

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Kingston KHX2133C14D4/4G 4GB

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A-DATA Technology AD5U48008G-B 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

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G Skill Intl F4-4400C19-32GVK 32GB

Corsair CMY8GX3M2A2133C8 4GB

Corsair CMY8GX3M2A2133C8 4GB

SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMA84GR7MFR4N-TF 32GB

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Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB