Samsung M378A1K43EB2-CWE 8GB vs Corsair CMR32GX4M2C3000C15 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMR32GX4M2C3000C15 16GB

需要考虑的原因
Corsair CMR32GX4M2C3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 -22% 更低的延时
更快的读取速度，GB/s

19.8 17.6

测试中的平均数值
更快的写入速度，GB/s

16.0 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Corsair CMR32GX4M2C3000C15 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 27
读取速度，GB/s

17.6 19.8
写入速度，GB/s

12.0 16.0
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 3735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2800C14D4/8GX 8GB

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Kingston KC5N22-MIE 16GB

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Samsung M393B1G70BH0-YK0 8GB

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A-DATA Technology AO1P32MCST2-BZPS 16GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

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SK Hynix HMA82GS6CJR8N-XN 16GB

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Kingston 9965525-018.A00LF 4GB

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G Skill Intl F4-3200C16-8GTZRX 8GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Teikon TMA81GS6CJR8N-VKSC 8GB

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Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

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Kingston 99U5584-017.A00LF 4GB

Kingston 9965662-013.A01G 16GB

Kingston 9965662-013.A01G 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB