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Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GTRG 16GB

Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3200C16-16GTRG 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 17.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-3200C16-16GTRG 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTRG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 -14% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GTRG 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 29
  • 读取速度，GB/s
    17.6 left arrow 17.3
  • 写入速度，GB/s
    12.0 left arrow 13.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3508

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

G Skill Intl F4-3200C16-16GTRG 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung 9905599-020.A00G 16GB
Samsung 9905599-020.A00G 16GB
内存RAM
Nanya Technology M2Y51264TU88A2B-3C 512MB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Kingston 99U5315-012.A00LF 512MB
Kingston 99U5315-012.A00LF 512MB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Kingston 9905417-061.A00G 4GB
Kingston 9905417-061.A00G 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-4000C16-16GVKA 16GB
G Skill Intl F4-4000C16-16GVKA 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C16-16GRS 16GB
G Skill Intl F4-2400C16-16GRS 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK128GX4M4A2666C16 32GB
Corsair CMK128GX4M4A2666C16 32GB
内存RAM