Samsung M378A5244CB0-CTD 4GB vs Samsung M471A1K43EB1-CWE 8GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 22% 更低的延时

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16 15.8

测试中的平均数值
更快的写入速度，GB/s

12.4 11.8

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 46
读取速度，GB/s

15.8 16.0
写入速度，GB/s

11.8 12.4
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2497 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMD128GX4M8B3000C16 16GB

Corsair CMD128GX4M8B3000C16 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMSX64GX4M2A3200C22 32GB

Corsair CMSX64GX4M2A3200C22 32GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB