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Samsung M378A5244CB0-CTD 4GB
Smart Modular SF4641G8CK8I8HLSBG 8GB

Samsung M378A5244CB0-CTD 4GB vs Smart Modular SF4641G8CK8I8HLSBG 8GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
Smart Modular SF4641G8CK8I8HLSBG 8GB 需要考虑的原因
Smart Modular SF4641G8CK8I8HLSBG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 36
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 34
  • 读取速度，GB/s
    15.8 left arrow 16.2
  • 写入速度，GB/s
    11.8 left arrow 12.0
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 2908

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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A-DATA Technology DQKD1A08 1GB
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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
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内存RAM
Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
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内存RAM
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Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM