Samsung M378B1G73QH0-CK0 8GB vs G Skill Intl F4-2800C15-8GTXG 8GB

总分

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

总分

G Skill Intl F4-2800C15-8GTXG 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

差异规格评论

差异

Samsung M378B1G73QH0-CK0 8GB

需要考虑的原因
Samsung M378B1G73QH0-CK0 8GB

报告一个错误

G Skill Intl F4-2800C15-8GTXG 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GTXG 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 42

左右 -68% 更低的延时
更快的读取速度，GB/s

14.7 13.6

测试中的平均数值
更快的写入速度，GB/s

11.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B1G73QH0-CK0 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 25
读取速度，GB/s

13.6 14.7
写入速度，GB/s

8.4 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 2975

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK8GX4M1A2666C16 8GB

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A-DATA Technology DQVE1908 512MB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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Samsung M378B1G73QH0-CK0 8GB

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G Skill Intl F4-2800C15-8GTXG 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Corsair CM4X4GF3000C15K4 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

INTENSO 5641162 8GB

INTENSO 5641162 8GB