Samsung M378B5173BH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 8% 更低的延时

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

报告一个错误

更快的读取速度，GB/s

14.6 13.4

测试中的平均数值
更快的写入速度，GB/s

9.9 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 25
读取速度，GB/s

13.4 14.6
写入速度，GB/s

8.0 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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