Samsung M378B5173EB0-CK0 4GB vs Crucial Technology CT8G4DFS8266.M8FJ 8GB

总分

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

差异规格评论

差异

Samsung M378B5173EB0-CK0 4GB

需要考虑的原因
Samsung M378B5173EB0-CK0 4GB

报告一个错误

Crucial Technology CT8G4DFS8266.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 42

左右 -45% 更低的延时
更快的读取速度，GB/s

16.4 13.9

测试中的平均数值
更快的写入速度，GB/s

12.1 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173EB0-CK0 4GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 29
读取速度，GB/s

13.9 16.4
写入速度，GB/s

8.1 12.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 3096

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471A1K43CB1-CRCR 8GB

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Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

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Kingston 9905624-004.A00G 4GB

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