Samsung M378B5273CH0-CH9 4GB vs G Skill Intl F4-2400C17-8GISM 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 12.6

测试中的平均数值

G Skill Intl F4-2400C17-8GISM 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GISM 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的写入速度，GB/s

10.7 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-2400C17-8GISM 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.2 12.6
写入速度，GB/s

8.4 10.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2759

RAM Latency Calculator

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最新比较

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Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

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Samsung M378B5273CH0-CH9 4GB

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G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB

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G Skill Intl F4-3200C14-32GVK 32GB

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AMD AE34G1601U1 4GB

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Kingston 9905702-019.A00G 8GB

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Kingston 99U5428-018.A00LF 8GB

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Corsair CMK16GX4M2B3733C17 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston KHX2133C14/8G 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Kingston 99U5293-016.A00LF 1GB

Kingston 99U5293-016.A00LF 1GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Samsung M3 78T5663EH3-CF7 2GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

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Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB