Samsung M378B5273CH0-CH9 4GB vs Kingston KHX2666C16S4/16G 16GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Kingston KHX2666C16S4/16G 16GB

需要考虑的原因
Kingston KHX2666C16S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的读取速度，GB/s

16.3 13.2

测试中的平均数值
更快的写入速度，GB/s

12.8 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston KHX2666C16S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

13.2 16.3
写入速度，GB/s

8.4 12.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 3137

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS832A.C8FJ 8GB

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Essencore Limited KD4AGU880-32A160T 16GB

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Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Corsair CMK16GX4M4B3333C16 4GB

Corsair CMK16GX4M4B3333C16 4GB

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Kingston 99U5428-018.A00LF 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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Kingston KVR16N11/8-SP 8GB

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SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB