Samsung M378B5273CH0-CH9 4GB vs Kingston KP6FH5-MIE 32GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston KP6FH5-MIE 32GB

Kingston KP6FH5-MIE 32GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 58

左右 36% 更低的延时

Kingston KP6FH5-MIE 32GB

需要考虑的原因
Kingston KP6FH5-MIE 32GB

报告一个错误

更快的读取速度，GB/s

16.4 13.2

测试中的平均数值
更快的写入速度，GB/s

12.8 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston KP6FH5-MIE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 58
读取速度，GB/s

13.2 16.4
写入速度，GB/s

8.4 12.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2658

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. TEANGROUP-UD4-2400 8GB

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Kingston KHX3200C18D4/8G 8GB

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Samsung M471A1K43DB1-CTD 8GB

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AMD AE34G2139U2 4GB

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Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Kllisre D4 8G 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

ASint Technology SLA304G08-GGNHM 4GB

ASint Technology SLA304G08-GGNHM 4GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Kingston 9905403-444.A00LF 4GB

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Kingston XN205T-MIE 16GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB