Samsung M378B5273CH0-CH9 4GB vs Nanya Technology NT2GC64B88G0NS-DI 2GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Nanya Technology NT2GC64B88G0NS-DI 2GB

Nanya Technology NT2GC64B88G0NS-DI 2GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 12.4

测试中的平均数值
更快的写入速度，GB/s

8.4 8.0

测试中的平均数值

Nanya Technology NT2GC64B88G0NS-DI 2GB

需要考虑的原因
Nanya Technology NT2GC64B88G0NS-DI 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Nanya Technology NT2GC64B88G0NS-DI 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 26
读取速度，GB/s

13.2 12.4
写入速度，GB/s

8.4 8.0
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2143 1710

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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