Samsung M378B5273CH0-CH9 4GB vs Samsung M393B5170FH0-YH9 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Samsung M393B5170FH0-YH9 4GB

Samsung M393B5170FH0-YH9 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 54

左右 31% 更低的延时
更快的读取速度，GB/s

13.2 9.2

测试中的平均数值
更快的写入速度，GB/s

8.4 7.5

测试中的平均数值

Samsung M393B5170FH0-YH9 4GB

需要考虑的原因
Samsung M393B5170FH0-YH9 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Samsung M393B5170FH0-YH9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 54
读取速度，GB/s

13.2 9.2
写入速度，GB/s

8.4 7.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2143 1990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HYMP112U64CP8-Y5 1GB

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Crucial Technology CT16G4DFD824A.C16FHD 16GB

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