Samsung M378B5273DH0-CH9 4GB vs G Skill Intl F4-2666C18-4GFX 4GB

总分

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

差异规格评论

差异

Samsung M378B5273DH0-CH9 4GB

需要考虑的原因
Samsung M378B5273DH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 74

左右 45% 更低的延时

G Skill Intl F4-2666C18-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2666C18-4GFX 4GB

报告一个错误

更快的读取速度，GB/s

15.4 13.3

测试中的平均数值
更快的写入速度，GB/s

8.6 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273DH0-CH9 4GB

G Skill Intl F4-2666C18-4GFX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 74
读取速度，GB/s

13.3 15.4
写入速度，GB/s

8.3 8.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2176 1849

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C11D3/4GX 4GB

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Corsair CMR16GX4M2C3200C16 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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A-DATA Technology AO1P32MCST2-BZPS 16GB

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Corsair CM5S16GM4800A40K2 16GB

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Essencore Limited KD48GS481-26N1600 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston KVR533D2N4 512MB

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SK Hynix HYMP512U64CP8-Y5 1GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMW64GX4M8A2666C16 8GB

Corsair CMW64GX4M8A2666C16 8GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

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AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-3200C16-16GTRS 16GB

G Skill Intl F4-3200C16-16GTRS 16GB

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Unifosa Corporation HU564404EP0200 4GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB