Samsung M378B5673EH1-CF8 2GB vs Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 28% 更低的延时

Nanya Technology M2X4G64CB8HG5N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB

报告一个错误

更快的读取速度，GB/s

13.7 12.7

测试中的平均数值
更快的写入速度，GB/s

9.7 7.5

测试中的平均数值
更高的内存带宽，mbps

12800 8500

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 39
读取速度，GB/s

12.7 13.7
写入速度，GB/s

7.5 9.7
内存带宽，mbps

8500 12800

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1066 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1988 2431

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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