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Samsung M378B5673EH1-CF8 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB

Samsung M378B5673EH1-CF8 2GB vs Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 28% 更低的延时
Nanya Technology M2X4G64CB8HG5N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 8500
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 39
  • 读取速度，GB/s
    12.7 left arrow 13.7
  • 写入速度，GB/s
    7.5 left arrow 9.7
  • 内存带宽，mbps
    8500 left arrow 12800
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2431

Samsung M378B5673EH1-CF8 2GB RAM的比较

Kingston 9905403-831.A00LF 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB RAM的比较

AMD R538G1601U2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2666C15-8GVS 8GB
G Skill Intl F4-2666C15-8GVS 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9905678-156.A00G 8GB
Kingston 9905678-156.A00G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
内存RAM
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston MSI32D4S2S1ME-8 8GB
Kingston MSI32D4S2S1ME-8 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-2666C15-8GVS 8GB
G Skill Intl F4-2666C15-8GVS 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905403-831.A00LF 8GB
Kingston 9905403-831.A00LF 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston MSI26D4S9S8ME-8 8GB
Kingston MSI26D4S9S8ME-8 8GB
内存RAM