Samsung M378B5673FH0-CH9 2GB vs Crucial Technology CT16G4DFD824A.C16FBD 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Crucial Technology CT16G4DFD824A.C16FBD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 -6% 更低的延时
更快的读取速度，GB/s

15.4 14.4

测试中的平均数值
更快的写入速度，GB/s

10.9 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 33
读取速度，GB/s

14.4 15.4
写入速度，GB/s

9.5 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2321 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMT16GX4M2K4266C19 8GB

Corsair CMT16GX4M2K4266C19 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Kingston 9965433-034.A00LF 4GB

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Kingmax Semiconductor GLLH22F-18---------- 16GB

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Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB