Samsung M378B5673FH0-CH9 2GB vs G Skill Intl F4-2133C15-8GRR2 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

更快的读取速度，GB/s

14.4 11

测试中的平均数值
更快的写入速度，GB/s

9.5 9.4

测试中的平均数值

G Skill Intl F4-2133C15-8GRR2 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GRR2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 -6% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-2133C15-8GRR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 33
读取速度，GB/s

14.4 11.0
写入速度，GB/s

9.5 9.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 2388

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2133C15-4GRR 4GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905403-444.A00LF 4GB

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Corsair CMK32GX4M4E4133C19 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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EXCELERAM D48G8G8H8SS9CJRB22 8GB

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Elpida EBJ41UF8BDW0-GN-F 4GB

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Corsair CMSX32GX4M1A2666C18 32GB

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ASint Technology SSA302G08-EGN1C 4GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

Samsung M393B1G70BH0-CK0 8GB

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Apacer Technology 78.CAGNT.AR40B 8GB

Apacer Technology 78.CAGNT.AR40B 8GB

Kingston KVR16N11/8-SP 8GB

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Kingston 99U5702-089.A00G 8GB

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Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB