Samsung M378B5673FH0-CH9 2GB vs Kingmax Semiconductor GLLH22F-18KII5------ 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

需要考虑的原因
Kingmax Semiconductor GLLH22F-18KII5------ 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 -59% 更低的延时
更快的读取速度，GB/s

18.9 14.4

测试中的平均数值
更快的写入速度，GB/s

13.6 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 22
读取速度，GB/s

14.4 18.9
写入速度，GB/s

9.5 13.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2321 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C18D4/8G 8GB

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G Skill Intl F4-3000C14-16GTZ 16GB

Samsung M378A1K43EB2-CWE 8GB

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AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Chun Well Technology Holding Limited CL19-20-20 D4-3600

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AMD R5S38G1601U2S 8GB

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Crucial Technology CT16G4SFD824A.C16FBD 16GB