Samsung M378B5673FH0-CH9 2GB vs SK Hynix HMAA2GU6AJR8N-XN 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

SK Hynix HMAA2GU6AJR8N-XN 16GB

需要考虑的原因
SK Hynix HMAA2GU6AJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 -6% 更低的延时
更快的读取速度，GB/s

17.1 14.4

测试中的平均数值
更快的写入速度，GB/s

11.0 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 33
读取速度，GB/s

14.4 17.1
写入速度，GB/s

9.5 11.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2321 3110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP512U64CP8-Y5 1GB

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Kingston HX424C15FB/8 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-2400C16-4GRS 4GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston KHX2133C14D4/8G 8GB

Kingston KHX2133C14D4/8G 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB