Samsung M378B5673FH0-CH9 2GB vs Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 35

左右 -35% 更低的延时
更快的读取速度，GB/s

17.2 14.4

测试中的平均数值
更快的写入速度，GB/s

17.1 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 26
读取速度，GB/s

14.4 17.2
写入速度，GB/s

9.5 17.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 3757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Samsung M471A2K43EB1-CWE 16GB

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A-DATA Technology AD73I1C1674EV 4GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Kingston 9965589-031.D01G 2GB

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Samsung M395T2863QZ4-CF76 1GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Samsung M393A2K40BB0-CPB 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Transcend Information TS512MLH64V4H 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB