Samsung M378B5773CH0-CH9 2GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

差异规格评论

差异

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 -50% 更低的延时
更快的读取速度，GB/s

15.6 12.8

测试中的平均数值
更快的写入速度，GB/s

11.6 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773CH0-CH9 2GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 26
读取速度，GB/s

12.8 15.6
写入速度，GB/s

7.4 11.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1770 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

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AMD R538G1601U2S-UO 8GB

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Corsair CMD16GX4M4B3200C16-R 4GB

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AMD AE34G1601U1 4GB

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Apacer Technology 78.B1GN3.AZ32B 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-4400C19-16GTZR 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3000C15-8GRK 8GB

G Skill Intl F4-3000C15-8GRK 8GB

PUSKILL DDR3 1600 8G 8GB

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A-DATA Technology DDR4 2666 8GB

Kingston 9905625-097.A00G 16GB

Kingston 9905625-097.A00G 16GB