Samsung M378B5773CH0-CH9 2GB vs Corsair CM4X16GE2666C16K4 16GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分

Corsair CM4X16GE2666C16K4 16GB

Corsair CM4X16GE2666C16K4 16GB

差异规格评论

差异

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

Corsair CM4X16GE2666C16K4 16GB

需要考虑的原因
Corsair CM4X16GE2666C16K4 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 39

左右 -11% 更低的延时
更快的读取速度，GB/s

14.6 12.8

测试中的平均数值
更快的写入速度，GB/s

10.5 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773CH0-CH9 2GB

Corsair CM4X16GE2666C16K4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 35
读取速度，GB/s

12.8 14.6
写入速度，GB/s

7.4 10.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1770 2636

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-4266C19-32GTZR 32GB

G Skill Intl F4-4266C19-32GTZR 32GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Apacer Technology 78.DAGNN.4030B 16GB

Apacer Technology 78.DAGNN.4030B 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMD32GX4M4A2666C15 8GB

Corsair CMD32GX4M4A2666C15 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5713-001.A00G 4GB

Kingston 99U5713-001.A00G 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BLS8G4D26BFSB.16FE 8GB

Crucial Technology BLS8G4D26BFSB.16FE 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB