Samsung M378B5773DH0-CH9 2GB vs Corsair CM4X4GF2666C16K4 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Corsair CM4X4GF2666C16K4 4GB

需要考虑的原因
Corsair CM4X4GF2666C16K4 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的读取速度，GB/s

15.3 11.7

测试中的平均数值
更快的写入速度，GB/s

10.7 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Corsair CM4X4GF2666C16K4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

11.7 15.3
写入速度，GB/s

7.2 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 2796

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9905469-124.A00LF 4GB

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SK Hynix GKE800UD102408-2133 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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