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Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C14-32GTZR 32GB

Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3200C14-32GTZR 32GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
G Skill Intl F4-3200C14-32GTZR 32GB

G Skill Intl F4-3200C14-32GTZR 32GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
G Skill Intl F4-3200C14-32GTZR 32GB 需要考虑的原因
G Skill Intl F4-3200C14-32GTZR 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 39
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    22.2 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.6 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C14-32GTZR 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 31
  • 读取速度，GB/s
    11.7 left arrow 22.2
  • 写入速度，GB/s
    7.2 left arrow 17.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 3938

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

G Skill Intl F4-3200C14-32GTZR 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C14-32GTZR 32GB
G Skill Intl F4-3200C14-32GTZR 32GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 99U5700-032.A00G 16GB
Kingston 99U5700-032.A00G 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-2800C15-4GVR 4GB
G Skill Intl F4-2800C15-4GVR 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMR16GX4M2C3000C16 8GB
Corsair CMR16GX4M2C3000C16 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMH16GX4M2D3600C18 8GB
Corsair CMH16GX4M2D3600C18 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMK64GX4M4E3200C16 16GB
Corsair CMK64GX4M4E3200C16 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM