Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3600C16-8GTZSW 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

G Skill Intl F4-3600C16-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 -63% 更低的延时
更快的读取速度，GB/s

22.7 11.7

测试中的平均数值
更快的写入速度，GB/s

18.6 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C16-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 24
读取速度，GB/s

11.7 22.7
写入速度，GB/s

7.2 18.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 4202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Crucial Technology CT8G4DFD8213.C16FA11 8GB

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Kingston 9905624-010.A00G 4GB

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Kingston 9905403-447.A00LF 4GB

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Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMA82GS6CJR8N-V-V 16GB

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SK Hynix HMT351U6BFR8C-H9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB