Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-4000C18-8GTZSW 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

G Skill Intl F4-4000C18-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的读取速度，GB/s

17.2 11.7

测试中的平均数值
更快的写入速度，GB/s

17.0 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4000C18-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

11.7 17.2
写入速度，GB/s

7.2 17.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMK64GX4M4D3000C16 16GB

Corsair CMK64GX4M4D3000C16 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston 9965640-035.C00G 32GB

Kingston 9965640-035.C00G 32GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

Kingston 9905403-038.A00G 4GB

Kingston 9905403-038.A00G 4GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB