Samsung M378B5773DH0-CH9 2GB vs Transcend Information TS1GSH64V4B 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Transcend Information TS1GSH64V4B 8GB

需要考虑的原因
Transcend Information TS1GSH64V4B 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 -44% 更低的延时
更快的读取速度，GB/s

12.8 11.7

测试中的平均数值
更快的写入速度，GB/s

8.2 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Transcend Information TS1GSH64V4B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 27
读取速度，GB/s

11.7 12.8
写入速度，GB/s

7.2 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kllisre M471A3243BB0-CP50 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston KHX3200C18D4/8G 8GB

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Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

Kingston HX318C10FK/4 4GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

AMD AE34G1601U1 4GB

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Samsung M471A5143EB1-CRC 4GB

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SK Hynix HYMP125S64CP8-S6 2GB

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Kingston KHX3466C16D4/16GX 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-4000C16-8GVK 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB