Samsung M378T5663QZ3-CF7 2GB vs ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 11.9

测试中的平均数值

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

需要考虑的原因
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 56

左右 -133% 更低的延时
更快的写入速度，GB/s

6.3 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 24
读取速度，GB/s

4,387.7 11.9
写入速度，GB/s

1,813.5 6.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 1218

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Corsair CMD32GX4M4C3200C14T 8GB

Corsair CMD32GX4M4C3200C14T 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB