Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

Crucial Technology CT16G4SFD824A.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 56

左右 -60% 更低的延时
更快的写入速度，GB/s

10.6 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 35
读取速度，GB/s

4,387.7 14.5
写入速度，GB/s

1,813.5 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-1333C9-4GIS 4GB

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Crucial Technology CT2K102464BD160B 8GB

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G Skill Intl F4-3000C16-16GTRS 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Micron Technology 72ASS4G72LZ-2G3A2 32GB

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Kingston KHX2933C17D4/16G 16GB

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Kingston 9905403-515.A00LF 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB