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Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB

Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-4000C16-16GTRSA 16GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
G Skill Intl F4-4000C16-16GTRSA 16GB 需要考虑的原因
G Skill Intl F4-4000C16-16GTRSA 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 56
    左右 -155% 更低的延时
  • 更快的写入速度，GB/s
    16.6 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 22
  • 读取速度，GB/s
    4,387.7 left arrow 17.9
  • 写入速度，GB/s
    1,813.5 left arrow 16.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    693 left arrow 3926

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

G Skill Intl F4-4000C16-16GTRSA 16GB RAM的比较

G Skill Intl F4-3600C19-8GSXWB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
OCMEMORY OCM3200CL16D-16GBN 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M471A1G43DB0-0-B 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2800C15-8GVRB 8GB
G Skill Intl F4-2800C15-8GVRB 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK16GX4M2K3600C19 8GB
Corsair CMK16GX4M2K3600C19 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
内存RAM