Samsung M378T5663QZ3-CF7 2GB vs Kingston 9905598-025.A00G 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 13.4

测试中的平均数值

Kingston 9905598-025.A00G 8GB

需要考虑的原因
Kingston 9905598-025.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 56

左右 -124% 更低的延时
更快的写入速度，GB/s

6.8 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Kingston 9905598-025.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 25
读取速度，GB/s

4,387.7 13.4
写入速度，GB/s

1,813.5 6.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 2045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Samsung M378T5663QZ3-CF7 2GB

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Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

Samsung M4 70T5663CZ3-CE6 2GB

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Transcend Information JM3200HLB-8G 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

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Kingston KVR800D2N6/2G 2GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMT128GX4M4C3200C16 32GB

Corsair CMT128GX4M4C3200C16 32GB