Samsung M378T5663QZ3-CF7 2GB vs Mushkin MRX4U300GJJM16G 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.7

测试中的平均数值

Mushkin MRX4U300GJJM16G 16GB

需要考虑的原因
Mushkin MRX4U300GJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 56

左右 -100% 更低的延时
更快的写入速度，GB/s

16.8 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Mushkin MRX4U300GJJM16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 28
读取速度，GB/s

4,387.7 19.7
写入速度，GB/s

1,813.5 16.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 3927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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G Skill Intl F4-2133C15-16GFXR 16GB

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Kingston 9905403-559.A00LF 8GB

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMU16GX4M2A2400C16 8GB

Corsair CMU16GX4M2A2400C16 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

SK Hynix HMAA2GU6CJR8N-XN 16GB

SK Hynix HMAA2GU6CJR8N-XN 16GB

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Kingston K531R8-MIN 4GB

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G Skill Intl F4-3200C16-8GTZSW 8GB