Samsung M378T5663QZ3-CF7 2GB vs SK Hynix HMA84GR7JJR4N-VK 32GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

SK Hynix HMA84GR7JJR4N-VK 32GB

SK Hynix HMA84GR7JJR4N-VK 32GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 10.8

测试中的平均数值

SK Hynix HMA84GR7JJR4N-VK 32GB

需要考虑的原因
SK Hynix HMA84GR7JJR4N-VK 32GB

报告一个错误

低于PassMark测试中的延时，ns

32 56

左右 -75% 更低的延时
更快的写入速度，GB/s

8.3 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

SK Hynix HMA84GR7JJR4N-VK 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 32
读取速度，GB/s

4,387.7 10.8
写入速度，GB/s

1,813.5 8.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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INTENSO 5641152 4GB

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UMAX Technology 16GB

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Corsair CMD8GX3M2A2933C12 4GB

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Samsung M378T5663QZ3-CF7 2GB

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SK Hynix HMA84GR7JJR4N-VK 32GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

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AMD R534G1601U1S-UO 4GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

SK Hynix HMA851S6CJR6N-VK 4GB

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Crucial Technology CT8G48C40U5.M4A1 8GB

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Kingston 9965589-017.D00G 8GB