Samsung M386B4G70DM0-CMA4 32GB vs Mushkin 99[2/7/4]190F 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Mushkin 99[2/7/4]190F 4GB

需要考虑的原因
Mushkin 99[2/7/4]190F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 52

左右 -100% 更低的延时
更快的读取速度，GB/s

14.1 9.7

测试中的平均数值
更快的写入速度，GB/s

10.7 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Mushkin 99[2/7/4]190F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 26
读取速度，GB/s

9.7 14.1
写入速度，GB/s

7.2 10.7
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2173 2679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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Kingston KHX1600C9S3L/4G 4GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Samsung M386B4G70DM0-CMA4 32GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston KHX3466C19D4/16G 16GB

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Corsair CMK16GX4M2K4266C16 8GB

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Kingston 99U5474-028.A00LF 4GB

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SK Hynix HMAA4GS6AJR8N-VK 32GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

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Samsung M378A1K43DB2-CTD 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

SpecTek Incorporated ?????????????????? 2GB

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Crucial Technology CT4G4DFS8213.C8FAR 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

Avant Technology W641GU42J9266NB 8GB

Avant Technology W641GU42J9266NB 8GB