Samsung M386B4G70DM0-CMA4 32GB vs Neo Forza NMUD416E82-3600 16GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Neo Forza NMUD416E82-3600 16GB

需要考虑的原因
Neo Forza NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 -93% 更低的延时
更快的读取速度，GB/s

19.6 9.7

测试中的平均数值
更快的写入速度，GB/s

16.0 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Neo Forza NMUD416E82-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 27
读取速度，GB/s

9.7 19.6
写入速度，GB/s

7.2 16.0
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2173 3909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851S6JJR6N-VK 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BL16G26C16U4B.16FE 16GB

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Corsair VS1GB800D2 1GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

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A-DATA Technology AD73I1C1674EV 4GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Kingston KN2M64-ETB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9905703-009.A00G 16GB

Kingston 9905703-009.A00G 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CMK64GX4M8X4133C19 8GB

Corsair CMK64GX4M8X4133C19 8GB