Samsung M386B4G70DM0-CMA4 32GB vs SK Hynix HMA851U6DJR6N-WM 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

SK Hynix HMA851U6DJR6N-WM 4GB

需要考虑的原因
SK Hynix HMA851U6DJR6N-WM 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的读取速度，GB/s

16.3 9.7

测试中的平均数值
更快的写入速度，GB/s

12.2 7.2

测试中的平均数值
更高的内存带宽，mbps

23400 14900

左右 1.57 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

SK Hynix HMA851U6DJR6N-WM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

9.7 16.3
写入速度，GB/s

7.2 12.2
内存带宽，mbps

14900 23400

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-10-9-28 / 1866 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2173 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Good Wealth Technology Ltd. 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

SK Hynix HMA851U6DJR6N-WM 4GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C15-8GTZKO 8GB

G Skill Intl F4-3200C15-8GTZKO 8GB