Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-4400C17-8GVK 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

G Skill Intl F4-4400C17-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4400C17-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

20.6 12.8

测试中的平均数值
更快的写入速度，GB/s

20.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-4400C17-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

12.8 20.6
写入速度，GB/s

9.0 20.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 4029

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3333C16-8GTZKW 8GB

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Samsung M391B5673EH1-CH9 2GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Corsair VS1GB800D2 1GB

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Crucial Technology CT8G4SFRA266.M16FG 8GB

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Corsair CMK16GX4M2Z4000C18 8GB

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Samsung M471B5273EB0-CK0 4GB

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 99U5625-015.A00G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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