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Samsung M391B5673EH1-CH9 2GB
Kingston KHX2400C12D4/4GX 4GB

Samsung M391B5673EH1-CH9 2GB vs Kingston KHX2400C12D4/4GX 4GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
Kingston KHX2400C12D4/4GX 4GB 需要考虑的原因
Kingston KHX2400C12D4/4GX 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Kingston KHX2400C12D4/4GX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    12.8 left arrow 15.5
  • 写入速度，GB/s
    9.0 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2881

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Kingston KHX2400C12D4/4GX 4GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3866C18-4GTZ 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KMKYF9-MIH 8GB
Kingston KMKYF9-MIH 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378A1K43DB2-CVF 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CMK64GX4M4A2666C16 16GB
Corsair CMK64GX4M4A2666C16 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMSX16GX4M2A3200C22 8GB
Corsair CMSX16GX4M2A3200C22 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM