Samsung M391B5673EH1-CH9 2GB vs Maxsun MSD44G24Q0 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 66

左右 61% 更低的延时
更快的写入速度，GB/s

9.0 7.4

测试中的平均数值

Maxsun MSD44G24Q0 4GB

需要考虑的原因
Maxsun MSD44G24Q0 4GB

报告一个错误

更快的读取速度，GB/s

15.5 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Maxsun MSD44G24Q0 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 66
读取速度，GB/s

12.8 15.5
写入速度，GB/s

9.0 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 1812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF3600C17D4/8GX 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

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Samsung M4 70T5663QZ3-CE6 2GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB