Samsung M391B5673EH1-CH9 2GB vs Samsung M471A1G43EB1-CPB 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 42% 更低的延时
更快的读取速度，GB/s

12.8 11.6

测试中的平均数值
更快的写入速度，GB/s

9.0 8.5

测试中的平均数值

Samsung M471A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M471A1G43EB1-CPB 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Samsung M471A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 45
读取速度，GB/s

12.8 11.6
写入速度，GB/s

9.0 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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SpecTek Incorporated 16G2666CL19 16GB

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Corsair CMK16GX4M2A2133C13 8GB

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G Skill Intl F4-4800C19-8GTZRC 8GB

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Kingston KHX2133C14S4/8G 8GB

Kingston KHX2133C14S4/8G 8GB

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M471A1G44BB0-CWE 8GB

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SK Hynix HMT325U6BFR8C-H9 2GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB