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Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB

Samsung M391B5673FH0-CH9 2GB vs Crucial Technology CT8G4DFS8266.C8FD1 8GB

总分
star star star star star
Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology CT8G4DFS8266.C8FD1 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

差异 规格 评论

差异

Samsung M391B5673FH0-CH9 2GB 需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
Crucial Technology CT8G4DFS8266.C8FD1 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FD1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    13.3 left arrow 16.6
  • 写入速度，GB/s
    8.5 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2213 left arrow 2951

Samsung M391B5673FH0-CH9 2GB RAM的比较

Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Corsair CMK16GX4M2B3733C17 8GB
Corsair CMK16GX4M2B3733C17 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3000C16-16GVRB 16GB
G Skill Intl F4-3000C16-16GVRB 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM