RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
比较
Samsung M391B5673FH0-CH9 2GB vs Patriot Memory (PDP Systems) 2400 C15 Series 4GB
总分
Samsung M391B5673FH0-CH9 2GB
总分
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673FH0-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
32
左右 13% 更低的延时
需要考虑的原因
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
报告一个错误
更快的读取速度,GB/s
15.7
13.3
测试中的平均数值
更快的写入速度,GB/s
11.3
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
32
读取速度,GB/s
13.3
15.7
写入速度,GB/s
8.5
11.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2213
2854
Samsung M391B5673FH0-CH9 2GB RAM的比较
Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905598-009.A00G 8GB
A-DATA Technology DOVF1B163G2G 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Micron Technology 18HTF12872AY-800F1 1GB
V-GEN D4H8GL36A8TXV 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4000C14-16GTZR 16GB
A-DATA Technology DOVF1B163G2G 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Kingston 9965525-155.A00LF 8GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-16GIS 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX3000C16/16GX 16GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
AMD R748G2133U2S 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
报告一个错误
×
Bug description
Source link