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Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Samsung M393B1G70BH0-CK0 8GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Chun Well Technology Holding Limited MD4U1632161DCW 16GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 51
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 31
  • 读取速度，GB/s
    9.8 left arrow 15.7
  • 写入速度，GB/s
    8.1 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3318

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905711-032.A00G 8GB
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SK Hynix HMA81GS6DJR8N-XN 8GB
内存RAM