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Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C17-8GTRS 8GB

Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-3600C17-8GTRS 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
G Skill Intl F4-3600C17-8GTRS 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 51
    左右 -132% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 22
  • 读取速度，GB/s
    9.8 left arrow 16.9
  • 写入速度，GB/s
    8.1 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3166

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

G Skill Intl F4-3600C17-8GTRS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.01G86.9H50C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK64GX4M2E3200C16 32GB
Corsair CMK64GX4M2E3200C16 32GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK32GX4M2L3200C16 16GB
Corsair CMK32GX4M2L3200C16 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX4000C19D4/8GX 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Corsair CMT64GX4M8X3600C18 8GB
Corsair CMT64GX4M8X3600C18 8GB
内存RAM