Samsung M393B1G70BH0-YK0 8GB vs Corsair CMK16GX4M2E4000C19 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Corsair CMK16GX4M2E4000C19 8GB

Corsair CMK16GX4M2E4000C19 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Corsair CMK16GX4M2E4000C19 8GB

需要考虑的原因
Corsair CMK16GX4M2E4000C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 49

左右 -58% 更低的延时
更快的读取速度，GB/s

14.3 10.2

测试中的平均数值
更快的写入速度，GB/s

12.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Corsair CMK16GX4M2E4000C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 31
读取速度，GB/s

10.2 14.3
写入速度，GB/s

8.1 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G2139U2 4GB

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Kingston KHX2400C11D3/4GX 4GB

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A-DATA Technology DQVE1908 512MB

Transcend Information TS2GLH64V4B 16GB

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Kingston 9905403-061.A00LF 2GB

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Crucial Technology CT8G4DFS8266.K8FB 8GB

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Corsair CM2X1024-6400C4 1GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB

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Corsair CMV16GX4M1A2666C18 16GB