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Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2400C16-16GFX 16GB

Samsung M393B1G70BH0-YK0 8GB vs G Skill Intl F4-2400C16-16GFX 16GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 53
    左右 8% 更低的延时
G Skill Intl F4-2400C16-16GFX 16GB 需要考虑的原因
G Skill Intl F4-2400C16-16GFX 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2400C16-16GFX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 53
  • 读取速度，GB/s
    10.2 left arrow 14.0
  • 写入速度，GB/s
    8.1 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 3020

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

G Skill Intl F4-2400C16-16GFX 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2400C16-16GFX 16GB
G Skill Intl F4-2400C16-16GFX 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905701-004.A00G 16GB
Kingston 9905701-004.A00G 16GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
内存RAM