Samsung M393B1G70BH0-YK0 8GB vs SK Hynix HMA82GS6CJR8N-XN 16GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

SK Hynix HMA82GS6CJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 49

左右 -23% 更低的延时
更快的读取速度，GB/s

14.8 10.2

测试中的平均数值
更快的写入速度，GB/s

11.2 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMA82GS6CJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 40
读取速度，GB/s

10.2 14.8
写入速度，GB/s

8.1 11.2
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2465 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU008G-H3200GST 8GB

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Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471B5173DB0-YK0 4GB

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Corsair CMK4GX4M1A2400C16 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston 9905598-006.A00G 8GB

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Kingston 9905584-016.A00LF 4GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB