Samsung M393B1G70QH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Samsung M393B1G70QH0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

更快的写入速度，GB/s

8.0 7.4

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 52

左右 -108% 更低的延时
更快的读取速度，GB/s

14.2 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 25
读取速度，GB/s

9.8 14.2
写入速度，GB/s

8.0 7.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2179 2104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston 99U5702-025.A00G 8GB

Kingston 99U5702-025.A00G 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

Kingston 9905624-018.A00G 8GB

Kingston 9905624-018.A00G 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905630-063.A00G 16GB

Kingston 9905630-063.A00G 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology AFLD48EH1P 8GB

Micron Technology AFLD48EH1P 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

INTENSO 5641162 8GB

INTENSO 5641162 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Kingston 9965516-049.A00LF 8GB

Kingston 9965516-049.A00LF 8GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Super Talent STT-WB160CL0901 2GB

Super Talent STT-WB160CL0901 2GB

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB