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Samsung M393B1G70QH0-YK0 8GB
Mushkin MR[A/B]280HHHH16G 16GB

Samsung M393B1G70QH0-YK0 8GB vs Mushkin MR[A/B]280HHHH16G 16GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
Mushkin MR[A/B]280HHHH16G 16GB 需要考虑的原因
Mushkin MR[A/B]280HHHH16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 52
    左右 -136% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
Mushkin MR[A/B]280HHHH16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 22
  • 读取速度，GB/s
    9.8 left arrow 18.4
  • 写入速度，GB/s
    8.0 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 3394

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

Mushkin MR[A/B]280HHHH16G 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMT32GX4M4Z3200C16 8GB
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V-GEN D4H4GS24A8 4GB
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston 9965662-009.A00G 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
内存RAM
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AMD R5S38G1601U2S 8GB
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内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
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Heoriady M471A1K43BB1-CRC 16GB
内存RAM
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
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Kingston 9905668-002.A00G 8GB
内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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Roa Logic BV W4U2666CX1-8G 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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Kingston KHX2400C14S4/16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMSX16GX4M2A3200C22 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM