Samsung M393B1K70CH0-CH9 8GB vs Asgard VMA44UI-MEC1U2AW2 32GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 66

左右 33% 更低的延时

Asgard VMA44UI-MEC1U2AW2 32GB

需要考虑的原因
Asgard VMA44UI-MEC1U2AW2 32GB

报告一个错误

更快的读取速度，GB/s

15.3 11.2

测试中的平均数值
更快的写入速度，GB/s

9.5 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Asgard VMA44UI-MEC1U2AW2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 66
读取速度，GB/s

11.2 15.3
写入速度，GB/s

8.1 9.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 2122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C14-32GVK 32GB

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Corsair CMSO32GX4M2A2133C15 16GB

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Kingston K531R8-MIN 4GB

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Samsung M378B5773DH0-CH9 2GB

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A-DATA Technology AO1P32NC8W1-BDZS 8GB

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Corsair CMV4GX3M1B1600C11 4GB

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G Skill Intl F4-2400C15-4GVR 4GB

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Apacer Technology 78.C2GFA.AF30B 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M471A5143EB1-CRC 4GB

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Kingston XJ69DF-HYA 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Avant Technology J642GU42J9266N2 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMW128GX4M4E3200C16 32GB

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Kingston 9905471-076.A00LF 8GB

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Kingston 9965643-002.A01G 4GB

Kingston 9965643-002.A01G 4GB